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FDG327NZ
August 2008
FDG327NZ
20V N-Channel PowerTrench(R) MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.
Features
* 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V. RDS(ON) = 100 m @ VGS = 2.5 V RDS(ON) = 140 m @ VGS = 1.8 V
* Fast switching speed * Low gate charge * High performance trench technology for extremely low RDS(ON) * High power and current handling capability.
Applications
* DC/DC converter * Power management * Load switch
S D D G
Pin 1
D D
SC70-6
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
20 8
(Note 1a)
Units
V A W C
1.5 6 0.42 0.38 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
300 333
C/W
Package Marking and Ordering Information
Device Marking .37 Device FDG327NZ Reel Size 7'' Tape width 8mm Quantity 3000 units
(c)2008 Fairchild Semiconductor Corporation
FDG327NZ Rev C1(W)
FDG327NZ
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A
Min Typ
20 11
Max
Units
V mV/C
Off Characteristics
ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 8 V, VGS = 0 V VDS = 0 V
1 10
A A
On Characteristics
VGS(th) VGS(th) TJ RDS(on) ID(on) gFS
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 1.5 A VGS = 2.5 V, ID = 1.4 A VGS = 1.8 V, ID = 1.2 A VGS = 4.5 V, ID = 1.5 A, TJ =125C VGS = 4.5V, VDS = 5 V VDS = 10 V, ID = 1.5 A
0.4
0.7 -2 68 77 90 86
1.5
V mV/C
90 100 140 123
m
3 2.2
A S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 10 V, f = 1.0 MHz
V GS = 0 V
412 81 44 1.9
pF pF pF
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 10 V, VGS = 4.5 V,
ID = 1 A, RGEN = 6
6.2 2.3 18 2.9
13 10 33 10 6
ns ns ns ns nC nC nC
VDS = 10 V, VGS = 4.5 V
ID = 1.5 A,
4.2 0.4 1
Drain-Source Diode Characteristics and Maximum Ratings
VSD trr Qrr Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IF = 1.5 A, IS = 0.32 A
(Note 2)
0.6 4 2
1.2
V nS nC
diF/dt = 100 A/s
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
300C/W when mounted on a 1in2 pad of 2 oz copper.
b)
333C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDG327NZ Rev C1(W)
FDG327NZ
Typical Characteristics
10
1.8V
ID, DRAIN CURRENT (A) 8
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS= 4.5V 2.5V V
1.8
2.0V VGS=1.5V
1.6
6
1.4
1.8V 2.0V
1.5V
4
1.2
2.5V 3.0V
2
1
4.5V
0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V)
0.8 0 2 4 6 8 10 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.22 RDS(ON), ON-RESISTANCE (OHM)
1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100
o
ID = 1.5A VGS = 4.5V
ID = 0.8A
0.17
TA = 125oC
0.12
TA = 25oC
0.07
0.02
125 150
0.5
1.5
2.5
3.5
4.5
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation withTemperature.
10
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10
25 C
IS, REVERSE DRAIN CURRENT (A)
VDS = 5.0V
ID, DRAIN CURRENT (A) 8
TA = -55oC
o
VGS = 0V
1
TA = 125oC 25oC -55oC
125 C
6
o
0.1
4
0.01
2
0.001
0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V)
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDG327NZ Rev C1(W)
FDG327NZ
Typical Characteristics
5 VGS, GATE-SOURCE VOLTAGE (V)
600
ID = 1.5A
4
VDS = 5V 10V
CAPACITANCE (pF) 500
f = 1 MHz VGS = 0 V CISS
3
15V
400 300 200
2
COSS
100
1
CRSS
0 0 1 2 3 4 5 Qg, GATE CHARGE (nC)
0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
10
Figure 8. Capacitance Characteristics.
20
ID, DRAIN CURRENT (A)
1
100s 1ms 10ms 100ms 1s 10s DC
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT
SINGLE PULSE RJA = 333C/W TA = 25C
15
10
0.1
VGS = 4.5V SINGLE PULSE RJA = 333oC/W TA = 25oC
5
0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V)
0 0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5
RJA(t) = r(t) * RJA RJA = 333 C/W P(pk) t1 t2
SINGLE PULSE 0.02 0.01
o
0.2
0.1
0.1 0.05
TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.01 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDG327NZ Rev C1(W)
FDG327NZ
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Rev. I35
FDG327NZ Rev.C1(W) www.fairchildsemi.com

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